Abstract:Stress is a universal phenomenon in thin film deposition. It has important effect on structure and performance
of thin film. In order to improve optical and mechanical performance of filters, the stress in ZnS/ Ge optical
thin film and stress control technology are studied by theory and experiments. It is found that ion beam bombardment
and vacuum annealing affect the stress in thin film. The stress in ZnS films is compressive stress. Ion beam assisted
deposition makes the stress uniformity in ZnS films. Vacuum annealing makes compressive stress in ZnS films half of
the value before annealing. Finite element method analysis results of ZnS/ Ge multilayer thin films show the thermal
stress has larger value on edge of thin film and substrate. Thin film has larger deformation on edge. The results show
that ZnS/ Ge multilayer thin film filters have less compressive stress by optimum deposition and different stress films.
The average stress is 0. 1 MPa respectively.
