In this paper, theoretical analysis and experiment verification were combined to analyze the sawing force of SiC wafer cut with electroplated diamond wire saw under workpiece rotating condition. Based on the grinding and dynamic cutting theory, the motion model of wire saw and workpiece, the radial and tangential force of a single diamond grain were analyzed, and then the SiC wafer sawing force model was built. The SiC wafer sawing experiments with workpiece rotating were carried out to verify the theoretical analysis, the influence of wire saw velocity, work piece feeding, workpiece rotating and the uncut part of the workpiece on the tangential force were emphatically ana lyzed. The results show that the relative error between the theoretical analysis and experimental result is no more than 5. 2%, thus the correctness of the established model is verified, which will provide basis for exploring the SiC wafer cutting mechanism and parameter optimizing