The gold wire was used in the circuit packaging interconnection of spacecraft miniaturized microwave module and other products. The performance of gold wire bonding interface was easy to change because of the influence of space high and low temperature environment， thus affecting the service reliability. In this paper， the evolution of high and low temperature characteristics of the gold wire interface was studied， including the composition and interfacial migration， interfacial layer thickness change， tensile shear force and failure mode evolution of gold wire bonding after space environmental simulation tests， and the change rule of microstructure of Au-Al bonding interface under different temperature environment was obtained. The results show that the gold interface still maintain high bonding strength after the high and low temperature cycle test. A certain degree of intermetallic compound growth can improve the strength of bonding interface. But in the high temperature storage test， as time increases， the gold IMC （Intermetallic Compound） interface layer and the intermetallic compound increase rapidly， and failure damage positions increasingly appear in the bonding interface. The gold content near the aluminum metallized layer increases as a result of diffusion， the interface bonding strength reduces with the increase of the thickness of IMC interface layer at the Au/Al bonding interface.