极端温度下功率SiGe HBTs辐照特性研究
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天津大学微电子学院,天津市成像与感知微电子技术重点实验室,天津 300072

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中图分类号:

TP431

基金项目:

国家自然科学基金(61871285)


Characteristics of SiGe Heterojunction Bipolar Transistors at Extreme Temperatures
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Affiliation:

School of Microelectronics,Tianjin University,Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology,Tianjin 300072

Fund Project:

National Natural Science Foundation of China (61871285)

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    摘要:

    为研究不同发射极面积的SiGe HBTs在极端温度下的辐照特性,本文系统地表征了质子辐照前后功率硅锗异质结双极晶体管(SiGe HBTs)在不同温下的辐照特性;揭示发射极面积与功率SiGe HBTs的辐照损伤相关性;对功率SiGe HBTs器件进行建模研究,提取辐照影响器件内部的主要参数;表征了不同条件下辐照前后电子密度变化量(Δ edensity)、载流子复合率变化量(Δ SRH recombination)以及载流子迁移率变化量(Δ emobility),对辐照影响功率SiGe HBTs的内部物理机制进行系统的分析。研究结果表明,功率SiGe HBTs的发射极面积与质子辐照损伤成正比,性能退化严重;在极端温度下,具有更好的抗质子辐照能力;在抗辐照领域和空间应用等领域有巨大的潜力。

    Abstract:

    In order to study the irradiation characteristics of SiGe heterojunction bipolar transistors with different emitter areas at extreme temperatures,characteristics of irradiated power SiGe heterojunction bipolar transistors (SiGe HBTs) were systematically analyzed at different temperatures in this paper; Correlation between emitter area and power SiGe HBTs'' irradiation damage of SiGe HBTs was revealed.Modeling of power SiGe HBTs device was conducted to extract the main internal parameters of the device affected by irradiation. The variation of electron density (Δ edensity), carrier recombination (Δ SRH recombination) and carrier mobility (Δ emobility) before and after irradiation were characterized, whose affecting mechanism on power SiGe HBTs irradiation was systematically analyzed. The results show proportional proton irradiation damage of emifferarea on power SiGe HBTs.SiGe HBTs have better proton irradiation resistance at extreme temperatures.which presents great potential in the field of radiation resistance and space application.

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胡开龙,魏印龙,秦国轩.极端温度下功率SiGe HBTs辐照特性研究[J].宇航材料工艺,2023,53(6):75-81.

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  • 收稿日期:2021-09-04
  • 最后修改日期:2021-12-08
  • 录用日期:2021-12-09
  • 在线发布日期: 2023-12-15
  • 出版日期: 2023-12-30
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