In order to study the characteristic defects of high-energy electron radiation of SiO₂ films for gate dielectrics with different passivation processes， high-energy electrons with an energy of 1 MeV are used to irradiated the SiO₂ films with three kinds of passivation processes（I，700 nm SiN + 500 nm PSG;II，1.2 μm SiN;III，700 nm PSG + 500 nm SiN） under irradiation fluences of 1×10¹⁵ e/cm²，5×10¹⁵ e/cm^-2，and 1×10¹⁶ e/cm².The results of Raman spectroscopy and X-ray photoelectron spectroscopy show that the SiO₂ film with I and III passivation process formed amorphous silicon and dioxygen ions. Fourier infrared spectroscopy results show that the SiO₂ film with I passivation process formed A₁， A₂， B₁ and B₂ defects with unknown defect structure； SiO₂ film with II passivation process formed A₁， A₂， B₁ and B₁''defects； SiO₂ film with III Passivation process formed A₁，B₁'' and B₂ defects.