单晶硅超精密切削工艺参数优化与实验研究
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作者:
作者单位:

1.昆明理工大学 机电工程学院,昆明 650500;2.云南北方光学科技有限公司,昆明 650200

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中图分类号:

TB332

基金项目:

国家自然科学基金(51765027)


Experimental Investigations on the Ultra Precision Cutting of Single-crystal Silicon for Optimal Process Parameters
Author:
Affiliation:

1.Kunming University of Science and Technology,Kunming 650500;2.Yunnan KIRO Photonics Co.Ltd,Kunming 650200

Fund Project:

The National Natural Science Foundation of China

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    摘要:

    为提高单点金刚石车削单晶硅的表面质量,以表面粗糙度为优化目标设计正交切削实验,通过方差分析、响应曲面分析和极差分析研究主轴转速、进给速度和切削深度对表面粗糙度的影响。结果表明,主轴转速对表面粗糙度影响最显著,主轴转速越大,表面粗糙度值越小;建立了表面粗糙度回归模型,通过响应曲面分析得到主轴转速和进给速度的交互作用对表面粗糙度的影响最大;在最优切削参数组合为主轴转速3 300 r/min、进给速度2 mm/min、切削深度5 µm的条件下,获得了表面粗糙度Ra 2.7 nm的高质量单晶硅元件,其表面相对光滑,切屑呈带状,材料在延性域内去除。

    Abstract:

    In order to improve the surface quality of single-crystal silicon by single-point diamond turning in the direction of surface roughness optimization, orthogonal cutting experiment are designed. The effects of spindle speed, feed speed and cutting depth on surface roughness are studied by variance analysis, response surface analysis and range analysis.The results show that the spindle speed has a significant effect on the surface roughness, and the larger the spindle speed is, the smaller the surface roughness value is. The regression model of surface roughness is established.The interaction of spindle speed and feed speed has the greatest influence on the surface roughness by response surface analysis.High-quality single-crystal silicon element with a surface roughness of Ra2.7 nm is obtained with the optimal combination of cutting parameters of 3300 r/min spindle speed,2 mm/min feed rate and 5µm depth of cut.Relatively smooth surface and the banded chip is observed.The material is removed in the ductile state.

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引用本文

姚同,杨晓京,肖建国,张万清,康杰.单晶硅超精密切削工艺参数优化与实验研究[J].宇航材料工艺,2022,52(6):60-64.

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  • 收稿日期:2021-03-31
  • 最后修改日期:2021-06-03
  • 录用日期:2021-06-07
  • 在线发布日期: 2022-12-23
  • 出版日期: 2022-12-30
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