Radiation Defects of SiO2 Films With Different Passivation Processes

1.Chongqing Giga Chip Technology Co., Ltd, Chongqing 401332;2.Material Science and Engineering School, Harbin Institute of Technology,,Harbin 150000

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    In order to study the characteristic defects of high-energy electron radiation of SiO2 films for gate dielectrics with different passivation processes, high-energy electrons with an energy of 1 MeV are used to irradiated the SiO2 films with three kinds of passivation processes(I,700 nm SiN + 500 nm PSG;II,1.2 μm SiN;III,700 nm PSG + 500 nm SiN) under irradiation fluences of 1×1015 e/cm2,5×1015 e/cm-2,and 1×1016 e/cm2.The results of Raman spectroscopy and X-ray photoelectron spectroscopy show that the SiO2 film with I and III passivation process formed amorphous silicon and dioxygen ions. Fourier infrared spectroscopy results show that the SiO2 film with I passivation process formed A1, A2, B1 and B2 defects with unknown defect structure; SiO2 film with II passivation process formed A1, A2, B1 and B1''defects; SiO2 film with III Passivation process formed A1,B1'' and B2 defects.

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  • Received:August 17,2021
  • Revised:October 12,2021
  • Adopted:September 24,2021
  • Online: January 13,2022
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