Abstract:In order to study the characteristic defects of high-energy electron radiation of SiO2 films for gate dielectrics with different passivation processes， high-energy electrons with an energy of 1 MeV are used to irradiated the SiO2 films with three kinds of passivation processes（I，700 nm SiN + 500 nm PSG;II，1.2 μm SiN;III，700 nm PSG + 500 nm SiN） under irradiation fluences of 1×1015 e/cm2，5×1015 e/cm-2，and 1×1016 e/cm2.The results of Raman spectroscopy and X-ray photoelectron spectroscopy show that the SiO2 film with I and III passivation process formed amorphous silicon and dioxygen ions. Fourier infrared spectroscopy results show that the SiO2 film with I passivation process formed A1， A2， B1 and B2 defects with unknown defect structure； SiO2 film with II passivation process formed A1， A2， B1 and B1''defects； SiO2 film with III Passivation process formed A1，B1'' and B2 defects.
